The global semiconductor industry is advancing at a record pace, driven by accelerating demand across renewable energy, electric vehicles (EVs), 5G, Ai, aerospace and advanced industrial systems. At the heart of this momentum is silicon carbide (SiC), a material transforming how we manage power, efficiency and performance in high-voltage environments.
SiC enables faster, cleaner and more efficient electrification. From energy conversion to data acceleration, it redefines what is possible in devices where every watt and every degree of heat count.
Crucial to this evolution are metal oxide semiconductor field-effect transistors (MOSFETs)- tiny transistors that regulate power and signal flow within chips. In semiconductor fabrication, where accuracy is everything, even a microscopic defect can impact performance. With SiC-based MOSFETs, manufacturers are delivering exceptional reliability in high-power applications.
Our new SiC abrasive-free slurry
As the industry advances toward SiC-based MOSFETs, manufacturing precision has become paramount. These devices require ultra-smooth, defect-free wafer surfaces to achieve optimal performance and reliability. Yet traditional slurry-based polishes pose a persistent challenge. Conventional slurries rely on abrasive particles to planarize wafers – but those same particles can cause scratches, pits or defects that diminish yield and compromise device integrity. For high-performance semiconductors, this remains a critical production bottleneck.
Our Surface Technology research and development team approached this challenge with a bold goal: eliminating abrasives. Our new SRS2550 is an abrasive-free, near-neutral SiC slurry engineered to produce flawless, mirror-like wafer surfaces in single-pass polishing. By removing abrasives entirely, SRSF2550 eliminates a major source of surface damage while preventing further issues from delaying production.
Why abrasive-free matters
In conventional polishing, abrasive particles are used to remove material and shape wafer surfaces. However, they introduce challenges such as:
- Sediment buildup
- Cleaning complexity
- Surface defects
Alternatively, our abrasive-free slurry eliminates these issues and offers:
- Cleaner surfaces with fewer defects and smoother finishes
- Higher usable wafer area, boosting yield
- Less post-cleaner loading, reducing waste
- Improved line stability due to reduced sedimentation, caused by abrasive build up
- Reduced cost of ownership, thanks to simplified cleaning and fewer reworks
Advancing toward market readiness
While still in its final stages of development, our abrasive-free slurry is already performing at a level comparable to market-standard abrasive formulations. It delivers high initial polishing rates and is specifically optimized for single-pass processes, providing both speed and precision.
During benchmarking, our SRS2550 formulation demonstrated up to 99% usable wafer area with surface roughness between 0.7-0.8Å and removal rates of 4–6 µm per hour — a performance profile positioned to support the semiconductor evolution in wafer sizes and advanced devices.
Shaping what is next in surface technology
In a world where flexibility, process stability and scalability define success, our new SRS2550 slurry provides semiconductor manufacturers with an innovative tool to higher efficiency and yield.
Connect with our team to learn more about our latest advancements in SiC slurries, review our abrasive-free product data sheet and other surface technology innovations, shaping our everyday future.
Gary Ho
Surface Technology and Chemical Mechanical Planarization R&D Manager
Gary Ho
Surface Technology and Chemical Mechanical Planarization R&D Manager
Gary Ho is the Surface Technology and Chemical Mechanical Planarization (CMP) Research and Development Manager at Vibrantz. With 18 years of experience in the CMP slurry industry, Gary specializes in nanomaterials and surface chemistry, bridging scientific research with practical applications. He has launched semiconductor surface treatment products for copper, tungsten, oxide, nitride, SiC and sapphire, supporting the evolving needs of third-generation semiconductor technologies.
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The shift to silicon carbide for long-lasting semiconductor solutions
Recently the semiconductor industry has transitioned from using silicon-based (SI) slurries to silicon carbide (SIC)-based slurries for semiconductor chemical mechanical planarization (CMP). SIC slurries offer significant advantages over traditional slurries due to their electrical properties, including:
- Higher thermal conductivity: SIC materials provide better heat management during the polishing process, ensuring stable conditions. This helps prevent wafer damage, improves polishing accuracy and boosts reliability.
- Improved efficiency in power devices: Using SIC slurries in CMP allows systems to handle higher voltages and temperatures, improving efficiency and performance.
- Greater mechanical hardness: SIC is mechanically harder than silicon, which enhances its longevity and speed in smoothing wafer surfaces because it can withstand great force without deforming. This combination makes it more durable, scratch resistant and better at delivering uniform results.
- Lower energy loss and better performance: Silicon semiconductors waste energy as heat but SIC semiconductors can run at higher frequencies and temperatures, reducing energy loss and enhancing improved performance.
- Thinner wafer production: SIC enables smaller and more compact semiconductor devices that are both lightweight and durable.
- Compatibility wi
